2SB1140-R pnp plastic-encapsulate transistors features ? power dissipation: p cm = 0.5w(t amb =25 ) ? collector current: i cm = -2a ? collector-base voltage: v (br)cbo = -50v ? operating and storage junction temperature range t j , t stg : -55 to + 150 electrical characteristics @ 25 unless otherwise specified symbol parameter min typ max unit v ceo collector-emitter breakdown voltage (i c =-1000 a, i b =0) -50 --- --- v v cbo collector-base breakdown voltage (i c =-10 a, i e =0) -50 --- --- v v ebo emitter-base voltage (i e =-10 a, i c =0) -5.0 --- --- v i cbo collector cut-off current (v cb =-50v, i e =0) --- --- -1.0 a i ebo emitter cut-off current (v eb =-5v, i c =0) --- --- -1.0 a h fe1 dc current gain (v ce =-2v, i c =-0.2a) 120 --- 340 --- h fe2 dc current gain (v ce =-2v, i c =-1a) 60 --- --- --- v ce(sat) collector-emitter saturation voltage (i c =-1a, i b =-50ma) --- --- -0.3 v v be(sat) base-emitter saturation voltage (i c =-1a, i b =-50ma) --- --- -1.2 v f t transition frequency (v ce =-10vdc, i c =50madc, f=200mhz) --- 80 --- mhz cob collector output capacitance (v cb =-10v, i e =0, f=1mhz) --- --- 80 pf classification of h fe rank r s range 120-240 170-340 marking 1l
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sot-89 omponents 20736 marilla street chatsworth
mcc revision: 5 2009/12/08 1.base 2.collector 3.emitter tm micro commercial components www. mccsemi .com 1 of 2 ? case material: molded plastic. ul flammability classification rating 94v-0 and msl rating 1 b a e d g h f k j c 1 2 3 2sb1140-s
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